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Opitmization of mask material for deep reactive ion etching of GaAs structures
- IZSÁK, Tibor et al. Opitmization of mask material for deep reactive ion etching of GaAs structures. In ADEPT 2022 : 10th International conference on advances in electronic and photonic technologies. Tatranská Lomnica, Slovakia. June 20-24, 2022. 1. vyd. Žilina : Vydavateľstvo EDIS, 2022, S. 169-172. ISBN 978-80-554-1884-1. E*e-165/2022
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