- The High-Frequency Characterization Of InAlGaN/GaN HEMT utilizing RF …
Number of the records: 1  

The High-Frequency Characterization Of InAlGaN/GaN HEMT utilizing RF Measurements

  1. The High-Frequency Characterization Of InAlGaN/GaN HEMT utilizing RF Measurements / aut. Martin Florovič, Michal Dzuriš, Jaroslav jr Kováč, René Harťanský, Aleš Chvála, Soňa Kováčová, Jaroslav Kováč
    Florovič Martin ; 033000  Dzuriš Michal ; 034000 Kováč Jaroslav jr. ; 033000 Harťanský René ; 034000 Chvála Aleš ; 033000 Kováčová Soňa ; 033000 Kováč Jaroslav ; 033000
    ADEPT 2024 : . S. 49-52
    HEMT GaN DC and RF measurements S-parameters
    článok zo zborníka
    AFD - Reports at home scientific conferences
    V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    article

    article

Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.