- The High-Frequency Characterization Of InAlGaN/GaN HEMT utilizing RF …
Number of the records: 1  

The High-Frequency Characterization Of InAlGaN/GaN HEMT utilizing RF Measurements

  1. HEMT. GaN. DC and RF measurements. S-parametersFlorovič, Martin, 1978- The High-Frequency Characterization Of InAlGaN/GaN HEMT utilizing RF Measurements / aut. Martin Florovič, Michal Dzuriš, Jaroslav jr Kováč, René Harťanský, Aleš Chvála, Soňa Kováčová, Jaroslav Kováč. Dzuriš, Michal, 1998-. Kováč, Jaroslav jr. 1977-. Harťanský, René, 1969-. Chvála, Aleš, 1981-. Kováčová, Soňa, 1981-. Kováč, Jaroslav, 1947- In: ADEPT 2024. -- 1. vyd.. -- 171 s.. -- 978-80-554-2109-4 International conference on Advances in Electronic and Photonic Technologies (Adept 2024). -- Žilina : Vydavateľstvo EDIS, 2024. -- S. 49-52.
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.