- Deep Level Transient Spectroscopy study of InAlGaN/GaN HEMT structures
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Deep Level Transient Spectroscopy study of InAlGaN/GaN HEMT structures

  1. Deep Level Transient Spectroscopy study of InAlGaN/GaN HEMT structures / aut. Matej Matuš, Jakub Drobný, Peter Benc, Martin Florovič, Sylvain Laurent Delage, Ľubica Stuchlíková
    Matuš Matej ; 033000  Drobný Jakub Benc Peter Florovič Martin ; 033000 Delage Sylvain Laurent Stuchlíková Ľubica ; 033000
    ADEPT 2023 : . S. 103-106
    GaN HEMT defects Deep Level Transient Spectroscopy
    článok zo zborníka
    AFD - Reports at home scientific conferences
    V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
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