- Opitmization of mask material for deep reactive ion etching of GaAs s…
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Opitmization of mask material for deep reactive ion etching of GaAs structures

  1. IZSÁK, Tibor et al. Opitmization of mask material for deep reactive ion etching of GaAs structures. In ADEPT 2022 : 10th International conference on advances in electronic and photonic technologies. Tatranská Lomnica, Slovakia. June 20-24, 2022. 1. vyd. Žilina : Vydavateľstvo EDIS, 2022, S. 169-172. ISBN 978-80-554-1884-1. E*e-165/2022
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