- Influence of NaI Additions on the Electrical, Dielectric, and Transpo…
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Influence of NaI Additions on the Electrical, Dielectric, and Transport Properties in the GeS2-Ga2S3-NaI Glass System

  1. Title statementInfluence of NaI Additions on the Electrical, Dielectric, and Transport Properties in the GeS2-Ga2S3-NaI Glass System / aut. Ondrej Bošák, A Castro, Vladimír Labaš, Viera Trnovcová, Petr Kostka, L Calvez, David Le Coq, Marian Kubliha
    Main entry-name Bošák, Ondrej, 1975- (Author) - MTF Ústav materiálov
    Another responsib. Castro, A. (Author)
    Labaš, Vladimír, 1963- Z1 (Author) - MTF Ústav materiálov
    Trnovcová, Viera (Author)
    Kostka, Petr (Author)
    Calvez, L. (Author)
    Le Coq, David (Author)
    Kubliha, Marian, 1971- Z1 (Author) - MTF Ústav materiálov
    Notečlánok publikovaný v ruskom jazyku, v časopise Russian in Elektrochimija, 2019, Vol. 55, no. 6, pp. 669-678
    In Russian Journal of Electrochemistry. -- ISSN 1023-1935. -- Vol. 55, iss. 6 (2019), s. 501-509
    Subj. Headings chalcohalide glasses
    ionic conductivity
    dielectric modulus
    LanguageEnglish
    Document kindRBX - článok z periodika
    CategoryADC - Scientific titles in foreign carented magazines and noticed year-books
    Category (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Year2019
    Citations [1] 2021: YANG, Guang - YANG, Chuanfan - HU, Daming - PENG, Changzhe - TANG, Ke - LU, Yunjun - TANG, Feng - HE, Xiaoyan - XU, Yinsheng. Effect of halogen on imprinting gradient refractive index microstructure in GeSinf2/inf–Gainf2/infSinf3/inf–NaX (X=F, Cl, Br, I) glasses for broadband infrared diffraction gratings. In Ceramics International, 2021, 47, 20, pp. 28511-28520. ISSN 02728842.
    2022: LIU, Bin - MO, Yaoyao - LIU, Yongwei - LU, Yunjun - HE, Xiaoyan - XU, Yinsheng - LIPOVSKII, Andrey - YANG, Guang. Effects of alkali metal ion on imprinting GRIN microstructure in GeS2-Ga2S3-MCl (M=Na, K, Cs) glasses for visible to mid-infrared microgratings. In: CERAMICS INTERNATIONAL, 2022, vol. 48, no. 22, pp. 33122-33134. ISSN 0272-8842.
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Number of the records: 1  

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