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GaAs-based MOS structures

Title statement	GaAs-based MOS structures : dát. obhaj. 3.12.2015, č. ved. odb. 5-2-13
Main entry-name	Gucmann, Filip (Author) - FEI Ústav elektroniky a fotoniky
Another responsib.	Gregušová, Dagmar Z5 (Thesis advisor)
Translated title	Kov-oxid-polovodič (MOS) štruktúry na GaAs
Issue data	Bratislava : STU v Bratislave FEI, 2015
Faculty	FEI
Date of acceptation	03.12.2015
Degreee discipline	5.2.13. elektronika
Degree program	D-ME
Phys.des.	115 s.
Subj. Headings	GaAs
	MOS
	Heteroštruktúra
	MOS
	Heterostructure
	GaAs
Language	English
URL	http://is.stuba.sk/zp/portal_zp.pl?podrobnosti=130535
Document kind	DDZ - dizertačná práca
Category	DAI - Qualificational works (thesis, habilitation, atestation...)

Barcode	Call number of location	Call number	Location	Sublocation	Info
284ED01525		E*ZP-389	Fakulta elektrotechniky a informatiky	Knižnica FEI

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Number of the records: 1