HWCVD of B-doped silicon carbide thin films for SHJ solar cell technology /

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HWCVD of B-doped silicon carbide thin films for SHJ solar cell technology

	CREPC022018 CREPC201802 CREPC201803 CREPC201806
Title statement	HWCVD of B-doped silicon carbide thin films for SHJ solar cell technology / aut. Jozef Huran, Miroslav Mikolášek, Milan Perný, Vladimír Šály, Angela Kleinová, Vlasta Sasinková, Alexander P Kobzev, Juraj Arbet
Main entry-name	Huran, Jozef (Author)
Another responsib.	Mikolášek, Miroslav, 1983- Z2 (Author) - FEI Ústav elektroniky a fotoniky
	Perný, Milan, 1985- Z1 (Author) - FEI Ústav elektroenergetiky a aplikovanej elektrotechniky
	Šály, Vladimír, 1956- Z1 (Author) - FEI Ústav elektroenergetiky a aplikovanej elektrotechniky
	Kleinová, Angela (Author)
	Sasinková, Vlasta (Author)
	Kobzev, Alexander P. (Author)
	Arbet, Juraj (Author)
Note	IF = 0,367 , Q=4
In	Integrated Ferroelectrics. -- ISSN 1058-4587. -- Vol. 184, (2017), s. 23-31
Subj. Headings	SiC thin film
	HWCVD
	structural properties
	SHJ solar cell
Language	English
Document kind	RBX - článok z periodika
Category	ADC - Scientific titles in foreign carented magazines and noticed year-books
Category (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
In databases
Year	2017

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Number of the records: 1