- HWCVD technology of silicon carbide thin films: Properties
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HWCVD technology of silicon carbide thin films: Properties

  1. CREPC201511 CREPC201601 CREPC201602 CREPC201603 CREPC201606 CREPC201606O
    Title statementHWCVD technology of silicon carbide thin films: Properties / aut. Jozef Huran, Miroslav Mikolášek, Pavol Boháček, Angela Kleinová, Vlasta Sasinková, Alexander P Kobzev, Mária Sekáčová, J Arbet
    Main entry-name Huran, Jozef (Author)
    Another responsib. Mikolášek, Miroslav, 1983- Z2 (Author) - FEI Ústav elektroniky a fotoniky
    Boháček, Pavol Z5 (Author)
    Kleinová, Angela Z5 (Author)
    Sasinková, Vlasta Z5 (Author)
    Kobzev, Alexander P. Z6 (Author)
    Sekáčová, Mária Z5 (Author)
    Arbet, J. Z5 (Author)
    In ADEPT 2015 [334 s.] / 3rd international conference on advances in electronic and photonic technologies. -- Žilina : University of Žilina, 2015. -- ISBN 978-80-554-1033-3. -- S. 104-107
    Subj. Headings SiC
    HWCVD
    structural and electrical characterization
    solar structure
    LanguageEnglish
    Document kindRZB - článok zo zborníka
    CategoryAFD - Reports at home scientific conferences
    Category (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Year2015
    article

    article

Number of the records: 1  

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